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Работ: 1
Работа: Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate
Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties
S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov
СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2025Цитирований: 2ABI