Zafarjon M. Khusanov

Работ: 2

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. Properties of Single Crystal Silicon Doped with Vanadium

   Kh.S. Daliev, Zafarjon M. Khusanov

   СтатьяChalcogenide Semiconductor Thin FilmsEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002064

2. Topological Features of Conductive Network Formation in Metal–Polymer Composites with Varying Filler Particle Sizes

   Zafarjon M. Khusanov, Fakhriddin T. Boymuratov, Sardor G'. To'ychiyev

   СтатьяCarbon Nanotubes in CompositesEast European Journal of Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.011346