Influence of the parameters to transition capacitance at nCdS-pSi heterostructure
I.B. SapaevAkfa University, Milliy Bog Street 264, 111221 Tashkent, UzbekistanБ. СапаевTashkent State Agrarian University, University street, 2, Tashkent 100140, UzbekistanS. SadullaevNational Research University TIIAME, Kori Niyoziy str., 100000 Tashkent, UzbekistanJonibek Sh. AbdullayevNational Research University TIIAME, Kori Niyoziy str., 100000 Tashkent, UzbekistanA. V. UmarovTashkent State Transport University. Adilkhodjaeva street, 1, 100067 Tashkent, UzbekistanR. U. SiddikovKokand Branch of Tashkent State Technical University, Street U.Nasir, 4, Kokand, UzbekistanA. A. MamasolievKokand Branch of Tashkent State Technical University, Street U.Nasir, 4, Kokand, UzbekistanKh.S. DalievScientific Research Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, 100174 Tashkent, Uzbekistan
ABI
Аннотация
It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5 Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In.
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