Transport properties of silicon doped with manganese via low-temperature diffusion
М. К. БахадырхановTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanГ. Х. МавлоновTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanС. Б. ИсамовTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanХ. М. ИлиевTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanK. S. AyupovTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanZ.M. SaparniyazovaTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanС. А. ТачилинTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan
ABI
Аннотация
We have studied the transport properties of silicon doped with manganese via low-temperature diffusion. The material exhibits colossal photoconductivity in the extrinsic region (1.5–3 μm), an abnormally high negative magnetoresistance, and a temperature variation of hole mobility atypical of silicon. The state of the manganese atoms has been probed by electron paramagnetic resonance spectroscopy and atomic force microscopy. The results are used to infer the structure of nanoclusters consisting of manganese atoms and to develop an approach to controlling the charge state and magnetic moment of the nanoclusters.
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