Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon
М. К. БахадырхановTashkent State Technical University, Tashkent, UzbekistanK. S. AyupovTashkent State Technical University, Tashkent, UzbekistanХ. М. ИлиевTashkent State Technical University, Tashkent, UzbekistanГ. Х. МавлоновTashkent State Technical University, Tashkent, UzbekistanO. É. SattorovTashkent State Technical University, Tashkent, Uzbekistan
ABI
Аннотация
It has been experimentally demonstrated that compensated silicon doped with manganese by diffusion at a low temperature exhibits anomalously high negative magnetoresistance (MR). It is established that the negative MR magnitude in this material can be controlled by varying the temperature, illumination, and the external electric and magnetic fields.
Перевод пока недоступен