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Technical Physics Letters

Работ: 356

Журнал · ISSN 1063-7850

  1. Photodeflection and photoacoustic microscopy of cracks and residual stresses induced by Vickers indentation in silicon nitride ceramic

    К. Л. Муратиков, A. L. Glazov, D. N. Rose +2

    СтатьяThermography and Photoacoustic TechniquesTechnical Physics Letters1997Цитирований: 2
    ABI

  2. Photothermoelectric converters of concentrated radiation

    A. M. Kasymakhunova, M. B. Nabiev

    Статьяsolar cell performance optimizationTechnical Physics Letters2003Цитирований: 2
    ABI

  3. Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

    С. И. Власов, A. V. Ovsyannikov, B. N. Zaveryukhin

    СтатьяEngineering Technology and MethodologiesTechnical Physics Letters2009Цитирований: 2
    ABI

  4. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2
    ABI

  5. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

    Б. Э. Эгамбердиев, M. Yu. Adylov

    СтатьяIon-surface interactions and analysisTechnical Physics Letters2001Цитирований: 2
    ABI

  6. Acoustostimulated expansion of the short-wavelength sensitivity range of AlGaAs/GaAs Solar cells

    E. B. Zaveryukhina, N. N. Zaveryukhina, L. N. Lezilova +3

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2005Цитирований: 2
    ABI

  7. Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

    А. С. Саидов, А. Кутлимратов, Б. Сапаев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2001Цитирований: 2
    ABI

  8. Magnetic field sensor based on compensated silicon

    М. К. Бахадырханов, Х. М. Илиев, K. S. Ayupov +1

    СтатьяMagnetic Field Sensors TechniquesTechnical Physics Letters2003Цитирований: 2
    ABI

  9. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    А. С. Саидов, A. Sh. Razzakov, D. V. Saparov

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2002Цитирований: 2
    ABI

  10. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

    А. С. Саидов, É. A. Koshchanov, A. Sh. Razzakov

    СтатьяPhase-change materials and chalcogenidesTechnical Physics Letters1998Цитирований: 2
    ABI

  11. The effect of γ radiation on the properties of p-n-p structures based on polycrystalline cadmium telluride

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2003Цитирований: 2
    ABI

  12. Anomalies of Frequency Cutoff of Semiconductor Diodes at Microwave

    G. Abdurakhmanov, Amugul Esbergenova, C. Reyimbaeva

    СтатьяAdvanced Research in Systems and Signal ProcessingTechnical Physics Letters2021Цитирований: 2
    ABI

  13. The effect of electron beam fusion on the structure and properties of plasma jet sprayed nickel alloy coatings

    A. D. Pogrebnyak, V. V. Vasilyuk, Darya Alontseva +3

    СтатьяLaser-induced spectroscopy and plasmaTechnical Physics Letters2004Цитирований: 2
    ABI

  14. Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt

    А. С. Саидов, A. Sh. Razzakov, Kurban Gaimnazarov

    СтатьяChalcogenide Semiconductor Thin FilmsTechnical Physics Letters2001Цитирований: 2
    ABI

  15. The role of the fano resonance in multiple exciton generation in quantum dots

    Б. Л. Оксенгендлер, M. B. Marasulov, В.Н. Никифоров

    СтатьяPlasmonic and Surface Plasmon ResearchTechnical Physics Letters2016Цитирований: 2
    ABI

  16. Generation of Charge Carriers in Uniformly Heated Si–Ge Films Heavily Doped with Titanium

    Ш.К. Кучканов, Х. Б. Ашуров

    СтатьяGlass properties and applicationsTechnical Physics Letters2018Цитирований: 2
    ABI

  17. Liquid phase epitaxy of Ge1−xSnx semiconductor films

    А. С. Саидов, A. Sh. Razzakov, É. A. Koshchanov

    СтатьяPhotonic and Optical DevicesTechnical Physics Letters2001Цитирований: 2
    ABI

  18. An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, Sh. N. Ibodullaev, Н. Ф. Зикриллаев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2021Цитирований: 2
    ABI

  19. Coupled vertical microcavities

    M. A. Kaliteevskiĭ

    СтатьяStrong Light-Matter InteractionsTechnical Physics Letters1997Цитирований: 1
    ABI

  20. Thick-layer glycerin-containing bichromated gelatin for recording volume holograms

    Yu. N. Denisyuk, N. M. Ganzherli, I. Maurer +1

    СтатьяPhotorefractive and Nonlinear OpticsTechnical Physics Letters1997Цитирований: 1
    ABI

  21. Kinetics of dislocation ensembles in deformable irradiated materials

    Н. В. Камышанченко, В. В. Красильников, I. M. Neklyudov +1

    СтатьяFusion materials and technologiesTechnical Physics Letters1997Цитирований: 1
    ABI

  22. Laser multipass probing in Thomson plasma diagnostics

    M. Yu. Kantor, D. V. Kuprienko

    СтатьяLaser-induced spectroscopy and plasmaTechnical Physics Letters1997Цитирований: 1
    ABI

  23. Carrier transport in a diode base with locally nonuniform recombination properties

    А. В. Иванов, N. B. Strokan, V. B. Shuman

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1997Цитирований: 1
    ABI

  24. New semiconductor devices based on a special metal-insulator-semiconductor structure for measuring the energy (dose) of electromagnetic and nuclear radiation

    P. G. Kasherininov, А. N. Lodygin

    СтатьяAdvanced Research in Systems and Signal ProcessingTechnical Physics Letters1997Цитирований: 1
    ABI

  25. Influence of uniaxial compression on the photoconductivity of highly compensated Si〈B, Mn〉

    М. К. Бахадырханов, Х. М. Илиев, Kh. F. Zikrillaev

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters1998Цитирований: 1
    ABI