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Technical Physics Letters

Работ: 356

Журнал · ISSN 1063-7850

  1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

    K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 1
    ABI

  2. Investigation of the influence of residual stresses on the thermophysical and thermoelastic properties of silicon nitride ceramic by photothermal and photoacoustic methods

    К. Л. Муратиков, A. L. Glazov, D. N. Rose +1

    СтатьяThermography and Photoacoustic TechniquesTechnical Physics Letters1998Цитирований: 1
    ABI

  3. Determination of fluctuations of the electron temperature and density in an ionizationunstable inert-gas plasma in a magnetogasdynamic channel

    T. A. Lapushkina, E. A. D’yakonova, R. V. Vasil’eva

    СтатьяPlasma Diagnostics and ApplicationsTechnical Physics Letters1998Цитирований: 1
    ABI

  4. Thermoelectric converter

    A. V. Karimov, Sh. N. Bakhronov

    СтатьяAdvanced Thermoelectric Materials and DevicesTechnical Physics Letters1999Цитирований: 1
    ABI

  5. Silicon single crystals ion-doped with ytterbium

    D. É. Nazyrov, Semyon Goncharov, А. В. Суворов

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2000Цитирований: 1
    ABI

  6. Nonselective polycrystalline radiation detectors based on higher manganese silicides

    T. S. Kamilov, A. Zh. Khusanov, М. К. Бахадырханов +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2002Цитирований: 1
    ABI

  7. Alternating-strain-induced drift of nonequilibrium charge carriers in GaAs photodetectors

    B. N. Zaveryukhin, N. N. Zaveryukhina, Р. А. Муминов +1

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters2002Цитирований: 1
    ABI

  8. Synthesis and study of a perovskite phase of yttrium barium metal oxide ceramics

    M. U. Kalanov, Э. М. Ибрагимова

    СтатьяAdvancements in Solid Oxide Fuel CellsTechnical Physics Letters2002Цитирований: 1
    ABI

  9. Silicon carbide materials obtained from rice husk

    G. T. Adylov, Sh. A. Faiziev, M. S. Paizullakhanov +2

    СтатьяAdvanced ceramic materials synthesisTechnical Physics Letters2003Цитирований: 1
    ABI

  10. Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

    О. О. Маматкаримов, Р. Х. Хамидов

    СтатьяForce Microscopy Techniques and ApplicationsTechnical Physics Letters2003Цитирований: 1
    ABI

  11. Calcium carbide synthesis using a solar furnace

    M. S. Paizullakhanov, Sh. A. Faiziev

    СтатьяPetroleum Processing and AnalysisTechnical Physics Letters2006Цитирований: 1
    ABI

  12. Acoustostimulated change in the optical absorption coefficient of gallium arsenide in the 0.81–1.77 μm wavelength range

    N. N. Zaveryukhina, E. B. Zaveryukhina, B. N. Zaveryukhin

    СтатьяThermography and Photoacoustic TechniquesTechnical Physics Letters2007Цитирований: 1
    ABI

  13. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

    N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1

    СтатьяIndustrial Engineering and TechnologiesTechnical Physics Letters2008Цитирований: 1
    ABI

  14. Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2010Цитирований: 1
    ABI

  15. Stoichiometry, phase composition, and properties of superhard nanostructured Ti-Hf-Si-N coatings obtained by deposition from high-frequency vacuum-arc discharge

    A. D. Pogrebnyak, A. P. Shpak, В. М. Береснев +7

    СтатьяMetal and Thin Film MechanicsTechnical Physics Letters2011Цитирований: 1
    ABI

  16. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2020Цитирований: 1
    ABI

  17. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2020Цитирований: 1
    ABI

  18. Application of ion implantation for synthesis of copper nanoparticles in a zinc oxide matrix for obtaining new nonlinear optical materials

    А. Л. Степанов, Р. И. Хайбуллин, N. Can +4

    СтатьяNonlinear Optical Materials StudiesTechnical Physics Letters2004Цитирований: 1
    ABI

  19. Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions

    А. Yusupov, К. Адамбаев, Zafar Turaev +2

    СтатьяChalcogenide Semiconductor Thin FilmsTechnical Physics Letters2017Цитирований: 1
    ABI

  20. Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si〈B, S〉

    Marat S. Yunusov, M. Kаrimov, P. A. Khalikov

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters1999Цитирований: 1
    ABI

  21. Investigation of the growth and properties of epitaxial layers of Si1−xSnx solid solutions

    Б. Сапаев, А. С. Саидов

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 1
    ABI

  22. The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates

    Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2004Цитирований: 1
    ABI

  23. Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts

    Б. Сапаев

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2004Цитирований: 1
    ABI

  24. Single crystals of TlIn1 – x Co x Se2 (0 ≤ x ≤ 0.5) solid solutions as effective materials for semiconductor tensometry

    S. Kh. Umarov, И. Нуритдинов, Zh. Dzh. Ashurov +1

    СтатьяSolid-state spectroscopy and crystallographyTechnical Physics Letters2017Цитирований: 1
    ABI

  25. Infralow-frequency oscillations in photoconductivity of chromium-doped silicon

    Kh. Kh. Dzhuliev, A. Yu. Leĭderman, A. T. Mamadalimov

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 1
    ABI