Infralow-frequency oscillations in photoconductivity of chromium-doped silicon
Kh. Kh. DzhulievPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. Yu. LeĭdermanPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. T. MamadalimovPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
The photoconductivity of chromium-doped silicon at T=4.2 K under constant illumination in the fundamental absorption band exhibits infralow-frequency oscillations at 10−2 Hz, the amplitude of which sharply increase with the illumination intensity. No such oscillations are observed in samples of n-Si〈Cr〉 or in chromium-free p-Si and n-Si control samples. A model qualitatively explaining the appearance of such oscillations is proposed, which is based on the fact that chromium in silicon can occur in two states, one being electrically (and recombination) active, and the other, inactive.
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