Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts

Epitaxial layers of wide-bandgap GaAs on germanium substrates were grown by liquid phase epitaxy from a lead-based solution melt in the temperature interval from 700 to 650°C. Depth-composition profiles of the obtained epilayers were determined. Scanning images obtained using characteristic X-ray emission show that the epilayers are structurally perfect and characterized by monotonic variation of the component concentrations both in depth and in the lateral direction, while the macroscopic defects and metal inclusions are absent. The photoluminescence spectra of solid solutions exhibit edge emission bands with the maxima at hν1=1.32 eV and hν2=1.43 eV.

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