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Technical Physics Letters

Работ: 356

Журнал · ISSN 1063-7850

  1. Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

    D. P. Bhattacharyya, D. A. Vinokurov, G.M. Gusinskii +6

    СтатьяIon-surface interactions and analysisTechnical Physics Letters1998Цитирований: 1
    ABI

  2. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

    V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

    СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 1
    ABI

  3. Dispersion-managed soliton propagation in optic fibers with random dispersion

    F. Kh. Abdullaev, D. V. Navotny

    СтатьяOptical Network TechnologiesTechnical Physics Letters2002Цитирований: 1
    ABI

  4. Local metallic conductivity of thin polyimide films as a result of “soft” electrical breakdown

    A.M. Elyashevich, A. N. Ionov, V. M. Tuchkevich +3

    СтатьяSynthesis and properties of polymersTechnical Physics Letters1997Цитирований: 1
    ABI

  5. Effect of heat treatment on the properties of erbium-doped silicon

    С. И. Власов, D. É. Nazyrov, A. A. Iminov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2000Цитирований: 1
    ABI

  6. The Optoelectronic Two-Wave Method for Remote Monitoring of the Content of Methane in Atmosphere

    Sultonali Abdurakhmonov, O. Kh. Kuldashov, I. T. Tozhiboev +1

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters2019Цитирований: 1
    ABI

  7. Mechanically-induced electrical effects in natural dielectrics

    V. S. Kuksenko, Kh. F. Makhmudov

    СтатьяEarthquake Detection and AnalysisTechnical Physics Letters1997Цитирований: 0
    ABI

  8. Thermoelectric elements based on compounds of silicon and transition metals

    M. I. Fedorov, V. K. Zaĭtsev, F. Yu. Solomkin +1

    СтатьяAdvanced Thermoelectric Materials and DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  9. Radiation characteristics of a dense cesium plasma in the visible range

    F. G. Baksht, V. F. Lapshin

    СтатьяAtomic and Molecular PhysicsTechnical Physics Letters1997Цитирований: 0
    ABI

  10. 3.3-μm LEDs for measuring methane

    А. А. Попов, M. V. Stepanov, V. V. Sherstnev +1

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  11. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

    A. V. Sakharov, S. V. Ivanov, S. V. Sorokin +4

    СтатьяStrong Light-Matter InteractionsTechnical Physics Letters1997Цитирований: 0
    ABI

  12. Two-section InGaAsP/InP Fabry-Perot laser with a 12 nm tuning range

    N. A. Pikhtin, A. Yu. Leshko, A. V. Lyutetskiĭ +4

    СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  13. Some physical properties of an Al2O3-SiC-TiC composite

    Б. И. Смирнов, В. И. Николаев, Yu. A. Burenkov +2

    СтатьяAdvanced ceramic materials synthesisTechnical Physics Letters1997Цитирований: 0
    ABI

  14. “Bioceramic-titanium nickelide” functional composites for medicine

    В. И. Итин, N. Shevchenko, Е. Н. Коростелева +3

    СтатьяEngineering Technology and MethodologiesTechnical Physics Letters1997Цитирований: 0
    ABI

  15. Use of a two-wire microwave line at the boundary of the investigated zone to measure the electron density in a low-temperature plasma

    A. D. Zuev, Andrey G. Smolin

    СтатьяPlasma Diagnostics and ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  16. Rearrangement of the shock wave structure in a decaying discharge plasma

    A. S. Baryshnikov, I. V. Basargin, Елена Васильевна Дубинина +1

    СтатьяPlasma and Flow Control in AerodynamicsTechnical Physics Letters1997Цитирований: 0
    ABI

  17. Using C60 molecules for deep carbonization of rhenium in ultrahigh vacuum

    Ronald Gall, E. V. Rut’kov, A. Ya. Tontegode +1

    СтатьяFullerene Chemistry and ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  18. Optical properties of layers of ultradisperse diamond obtained from an aqueous suspension

    A. E. Aleksenskii, V. Yu. Osipov, N. A. Kryukov +4

    СтатьяDiamond and Carbon-based Materials ResearchTechnical Physics Letters1997Цитирований: 0
    ABI

  19. Local polarization reversal in LiNbO3 crystals

    S. O. Fregatov, A. B. Sherman

    СтатьяPhotorefractive and Nonlinear OpticsTechnical Physics Letters1997Цитирований: 0
    ABI

  20. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

    R.A. Yankov, M. Voelskow, W. Kreissig +6

    СтатьяSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters1997Цитирований: 0
    ABI

  21. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

    I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  22. Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1997Цитирований: 0
    ABI

  23. Modulational instability of electromagnetic waves in long Josephson junctions

    F. Kh. Abdullaev

    СтатьяNonlinear Photonic SystemsTechnical Physics Letters1997Цитирований: 0
    ABI

  24. Conversion of heat into work using thermally inhomogeneous systems (Revised)

    G. V. Skornyakov

    СтатьяHeat Transfer and Mathematical ModelingTechnical Physics Letters1997Цитирований: 0
    ABI

  25. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

    М. В. Максимов, A. V. Sakharov, W. V. Lundin +7

    СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1997Цитирований: 0
    ABI