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Yu. P. Yakovlev

Работ: 21

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

  1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

    K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 1
    ABI

  2. 3.3-μm LEDs for measuring methane

    А. А. Попов, M. V. Stepanov, V. V. Sherstnev +1

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  3. Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1997Цитирований: 0
    ABI

  4. Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure

    K. D. Moiseev, M. P. Mikhaĭlova, O. V. Andreichuk +2

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  5. Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics

    K. D. Moiseev, M. P. Mikhaiova, O. G. Ershov +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1997Цитирований: 0
    ABI

  6. 1.94-μm light-emitting diodes for moisture-content measurements

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  7. Power characteristics of 2.2 μm LEDs for spectroscopic applications

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  8. New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers

    В. А. Соловьев, M. P. Mikhaĭlova, M. V. Stepanov +2

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  9. 2.2 μm cw single-mode diode lasers with thermoelectric cooling

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  10. Investigation of spontaneous and coherent radiation in the 3–4 μm wavelength range in an InGaAsSb/AlGaSbAs laser heterostructure

    E. A. Grebenshchikova, O. G. Ershov, B. E. Zhurtanov +3

    СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  11. Properties of the electron channel in single GaInAsSb/p-InAs heterostructures

    T. I. Voronina, T. S. Lagunov, M. P. Mikhaĭlova +4

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
    ABI

  12. InAsSb light-emitting diodes for the detection of CO2 (λ=4.3 μm)

    А. А. Попов, M. V. Stepanov, V. V. Sherstnev +1

    СтатьяAtmospheric and Environmental Gas DynamicsTechnical Physics Letters1998Цитирований: 0
    ABI

  13. 2.35 μm LEDs for measuring methane

    А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev

    СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1998Цитирований: 0
    ABI

  14. Growth of InAs photodiode structures from metalorganic compounds

    S. S. Kizhaev, M. P. Mikhaĭlova, C. C. Molchanov +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1998Цитирований: 0
    ABI

  15. Formation of optoelectronic structures based on InAsSb/InAsSbP solid solutions

    E. A. Grebenshchikova, A. M. Litvak, V. V. Sherstnev +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1998Цитирований: 0
    ABI

  16. Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers

    T. N. Danilova, O. I. Evseenko, A. N. Imenkov +4

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1998Цитирований: 0
    ABI

  17. Mechanisms of photocurrent amplification in isotypic n+-GaSb-n0-GaInAsSb-n+-GaAlAsSb heterostructures

    S. V. Slobodchikov, Х. М. Салихов, Yu. P. Yakovlev +1

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  18. AlGaAsSb lasers emitting in the 1.6 μm region

    T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov +2

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1999Цитирований: 0
    ABI

  19. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

    V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

    СтатьяSemiconductor Quantum Structures and DevicesCrystal Research and Technology2002Цитирований: 0
    ABI

  20. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

    V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

    СтатьяAdvanced Semiconductor Detectors and MaterialsCrystal Research and Technology2002Цитирований: 0
    ABI

  21. Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure

    L. I. Burov, A. S. Gorbatsevich, M. Jadan +2

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Applied Spectroscopy2011Цитирований: 0
    ABI