InAsSb light-emitting diodes for the detection of CO2 (λ=4.3 μm)
А. А. ПоповA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. V. StepanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. V. SherstnevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
The main characteristics of room-temperature light-emitting diodes (λ=4.3 μm) based on InAsSbP/InAsSb/InAsSbP III–V semiconductor heterostructures with a variable-gap buffer layer are reported. An optical power P=0.85 mW was achieved with a pulse length of ∼5 μs and 1 kHz repetition frequency. Conditions for maximizing the power of the light-emitting diodes are indicated. An example is given of the use of these diodes to detect carbon dioxide using the 4.3 μm fundamental absorption band.
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