Статья

Growth of InAs photodiode structures from metalorganic compounds

S. S. KizhaevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. P. MikhaĭlovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgC. C. MolchanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. D. StoyanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1998en

ABI

Аннотация

InAs layers were grown on p-InAs substrates by epitaxy from metalorganic compounds. Photodiodes were fabricated using the p-n junctions obtained. The current-voltage, capacitance-voltage, and spectral characteristics of the photodiode structures were investigated.

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Темы

Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices Machine Learning in Materials Science

Идентификаторы

DOI: 10.1134/1.1262072

Цитирования и источники

Цитирований: 0Использованных источников: 11

Показатели — AkademScholar · Скоро