1.94-μm light-emitting diodes for moisture-content measurements

High-power light-emitting diodes are demonstrated; they are characterized by a quantum efficiency of 5.5%, utilize a symmetric GaAlAsSb/GaInAsSb/GaAlAsSb double heterostructure, have a spontaneous-emission maximum at a wavelength of 1.94 μm, and operate in the temperature range from −80°C to +60°C. A continuous-wave optical power of 3.7 mW and a peak optical power of 90 mW in pulsed operation (τ∼1–5 ms, f=1 kHz) are attained at room temperature. The principal electrical and emission characteristics are given.

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