New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers
В. А. СоловьевA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. P. MikhaĭlovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. V. StepanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. V. SherstnevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
New potentials are demonstrated for the application of scanning electron microscope methods to identifying heteroboundaries, monitoring the sharpness of interfaces, and determining the positions of p-n junctions in laser structures based on InAsSb/InAsSbP, including at low temperatures. The method permits optimization of the parameters of long-wavelength lasers and to obtain record low threshold currents (Ith≤25 mA at T=77 K) for lasing wavelengths λ=3–3.5 μm.
Перевод пока недоступен
Темы
Идентификаторы
Цитирования и источники
Цитирований: 0Использованных источников: 7