K. D. Moiseev

Работ: 6

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

1. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions

   K. D. Moiseev, B. Ya. Meltser, В. А. Соловьев +4

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 1

   ABIABI:AkademIndex/openalex/1998.article.000055

2. Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure

   K. D. Moiseev, M. P. Mikhaĭlova, O. V. Andreichuk +2

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000128

3. Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics

   K. D. Moiseev, M. P. Mikhaiova, O. G. Ershov +1

   СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000151

4. Properties of the electron channel in single GaInAsSb/p-InAs heterostructures

   T. I. Voronina, T. S. Lagunov, M. P. Mikhaĭlova +4

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000257

5. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

   V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

   СтатьяSemiconductor Quantum Structures and DevicesCrystal Research and Technology2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000109

6. Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures

   V. Vorlı́ček, K. D. Moiseev, M. P. Mikhaĭlova +3

   СтатьяAdvanced Semiconductor Detectors and MaterialsCrystal Research and Technology2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000182