Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions
D. P. BhattacharyyaA. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. PetersburgD. A. VinokurovA. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. PetersburgG.M. GusinskiiA. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. PetersburgV.A. ElyukhinA. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. PetersburgO. V. KovalenkovA. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. PetersburgR. N. KyuttA. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. PetersburgJ.H. MarshA. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. O. NaidenovA. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. L. PortnoĭA. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
The photoluminescence spectra of samples of the solid solution In(0.5)Ga(0.5)P before and after implantation of high-energy nitrogen ions to doses of 1011−5×1012 cm−2 shows that the photoluminescence of the implanted (and annealed) samples may be the result of the formation of essentially one-dimensional semiconductor structures along the individual ion tracks.
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