Р. Х. Хамидов

Работ: 6

Ulugbek Tashkent State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan

1. Advanced Universal Hydrostatic Pressure Device with Pneumatic Amplifier for the Investigation of the Electrical and Thermal Properties of Semiconductors under Hydrostatic Pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   СтатьяHigh-pressure geophysics and materialsInstruments and Experimental Techniques2022Цитирований: 11

   ABIABI:AkademIndex/openalex/2022.article.000422

2. Wave processes in silicon samples with nickel impurities arising at pulsed hydrostatic pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   СтатьяElectromagnetic Effects on MaterialsSemiconductor Science and Technology2021Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.250850

3. Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

   О. О. Маматкаримов, С. З. Зайнабидинов, Azizbek Abduraimov +2

   СтатьяElectromagnetic Launch and Propulsion TechnologySemiconductors2000Цитирований: 2

   ABIABI:AkademIndex/openalex/2000.article.000081

4. Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

   О. О. Маматкаримов, Р. Х. Хамидов

   СтатьяForce Microscopy Techniques and ApplicationsTechnical Physics Letters2003Цитирований: 1

   ABIABI:AkademIndex/openalex/2003.article.000115

5. The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure

   О. О. Маматкаримов, Р. Х. Хамидов, A. A. Abdukarimov

   СтатьяElectromagnetic Effects on MaterialsMaterials Today Proceedings2019Цитирований: 1

   ABIABI:AkademIndex/openalex/2019.article.000617

6. Electric voltage redistribution effect in Schottky barrier structures based on Si<P,Ni> under hydrostatic pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   СтатьяSemiconductor materials and interfacesJournal of Physics Conference Series2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.009197