Semiconductor materials and interfaces

Работ: 771

Exploring Lithium Diffusion in LiF with Machine Learning Potentials: From Point Defects to Collective Ring Diffusion
Paolo De Angelis, Umberto Raucci, Francesco Mambretti +4
ПрепринтSemiconductor materials and interfacesnpj Computational Materials2025Цитирований: 0
ABI
Low-Temperature Electrophysical and optical Properties of p-Si/n-CdS Heterojunctions
Jo`shqin Abdullayev, I. B. Sapaev, Jamoliddin Razzokov +2
ПрепринтSemiconductor materials and interfacesSSRN Electronic Journal2025Цитирований: 0
ABI
Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation
J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2
СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
ABI
Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide
B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1
СтатьяSemiconductor materials and interfacesMaterials Today Communications2026Цитирований: 0
ABI
Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions
Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3
СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
ABI
STUDY of the influence of temperature and gamma radiation on the crystal structure of a thin TiO2 coating obtained on A Si (111) surface
B.E. Umirzakov, Z.A. Isaxanov, I.R. Bekpulatov +3
СтатьяChemical and Physical Properties of MaterialsPhysics Letters A2026Цитирований: 0
ABI
EXPERIMENTAL STUDY AND COMPUTATIONAL SIMULATIONAL ON THE RESISTIVITY ANSISOTROPY OF METAL AND SEMICONDUCTOR SINGLE CRYSTALS
Ogabek Toshpulatov
СтатьяAdvanced Materials and Semiconductor TechnologiesZenodo (CERN European Organization for Nuclear Research)2026Цитирований: 0
ABI
EXPERIMENTAL STUDY AND COMPUTATIONAL SIMULATIONAL ON THE RESISTIVITY ANSISOTROPY OF METAL AND SEMICONDUCTOR SINGLE CRYSTALS
Ogabek Toshpulatov
СтатьяAdvanced Materials and Semiconductor TechnologiesZenodo (CERN European Organization for Nuclear Research)2026Цитирований: 0
ABI
Mathematical Analysis of the C-V of Nanowires Based on Si and GaAs
Dostonbek Abduraimov, Avaz Ergashev, Mehrigiyo Uktamova +3
СтатьяNanowire Synthesis and ApplicationsEPJ Web of Conferences2026Цитирований: 0
ABI
Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction
I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4
СтатьяSemiconductor materials and interfacesResults in Physics2026Цитирований: 0
ABI
Microstructural, phase and electrophysical properties of TiSi2 alloy synthesized by Spark Plasma Sintering
B.D. Igamov, I.R. Bekpulatov, A.M. Normamatov +3
СтатьяSemiconductor materials and interfacesJournal of Alloys and Compounds2026Цитирований: 0
ABI
YUQORI HARORATLARDA (800–1200 °C) GERMANIYNING KREMNIYDA DIFFUZIYA JARAYONLARINI TADQIQ QILISH
Baxromjon Abdukaxxarovich Abduraxmanov, G'iyosiddin Abdivahob oʻgʻli Kushiyev, Davlatbek Davronbekovich Matyakubov +1
СтатьяSemiconductor materials and interfacesZenodo (CERN European Organization for Nuclear Research)2026Цитирований: 0
ABI
YUQORI HARORATLARDA (800–1200 °C) GERMANIYNING KREMNIYDA DIFFUZIYA JARAYONLARINI TADQIQ QILISH
Baxromjon Abdukaxxarovich Abduraxmanov, G'iyosiddin Abdivahob oʻgʻli Kushiyev, Davlatbek Davronbekovich Matyakubov +1
СтатьяSemiconductor materials and interfacesZenodo (CERN European Organization for Nuclear Research)2026Цитирований: 0
ABI
The effect of thermal treatment on the absorption spectra of background impurity (oxygen and carbon) atoms in p-Si<B,Pt> structures
Biloliddin M. Ergashev, Madinaxon Muydinova, Yorkin A. Mamataxunov +4
СтатьяSemiconductor materials and interfaces2026Цитирований: 0
ABI
The Influence of Impurity Nano- and Microclusters on the Photovoltaic and Electrophysical Properties of Silicon
N. F. Zikrillaev, K. S. Ayupov, Kh. F. Zikrillaev +4
СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2026Цитирований: 0
ABI
The Influence of γ-Irradiation on the Current Transport Mechanism upon the Application of Reverse Bias to the Al/p-CdTe/Mo Structure
A. S. Achilov, R. R. Kabulov, O. A. Abdulkhaev +4
СтатьяAdvanced Semiconductor Detectors and MaterialsSurface Engineering and Applied Electrochemistry2026Цитирований: 0
ABI
Room-Temperature Ferromagnetism and Spin Polarization in Silicon Doped with Manganese
O. E. Sattarov, Bahromjon A. Abdurakhmanov, Giyos A. Kushiev +3
СтатьяZnO doping and propertiesEast European Journal of Physics2026Цитирований: 0
ABI
Formation of Cu₁₅Si₄/Si Nanophase Films on Silicon Surfaces
K. Dovranov, M. Normuradov, X. Davranov +5
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2026Цитирований: 0
ABI
Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure
B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5
СтатьяSemiconductor materials and interfacesSolid State Sciences2026Цитирований: 0
ABI
Development and Investigation of Semiconductor Detectors of Ionizing Radiation Based on p-Si/n-InP Heterostructures
S. A. Radzhapov, A. S. Saidov, Sh. N. Usmonov +1
СтатьяAdvanced Materials and Semiconductor TechnologiesInstruments and Experimental Techniques2026Цитирований: 0
ABI
<p>Determination of the Energy Spectrum of the Density of States Under Uniaxial Pressure</p>
Mufazzalshoh Rakhmanov, Ikromjon Tursunov, Odiljon Mamatkarimov +2
ПрепринтSemiconductor materials and interfacesSSRN Electronic Journal2026Цитирований: 0
ABI