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Semiconductor materials and interfaces

Работ: 771

  1. Study of the Formation of Low-Dimensional Defect States in Single-Crystal Silicon with the Participation of Oxygen

    Akramjon Y. Boboev, Biloliddin M. Ergashev, Nuritdin Y. Yunusaliyev +1

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0
    ABI

  2. Conduction Band Electronic States of Fluorine-Substituted Furan‒Phenylene Co-Oligomer Films on the Silicon and Zinc Oxide Surfaces

    А. S. Komolov, И. А. Пронин, Э. Ф. Лазнева +10

    СтатьяOrganic Electronics and PhotovoltaicsCrystallography Reports2025Цитирований: 0
    ABI

  3. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

    N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0
    ABI

  4. Study of The Process of Formation of Heterostructural Nanofilms MexSiy/Si and GaxMe1-xAs/GaAs by Ion Implantation

    Eshboboyev Sardor Nurbobo Ugli, Tashatov Allanazar Karshievich

    СтатьяIon-surface interactions and analysisJournal of Physical Science2025Цитирований: 0
    ABI

  5. Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

    S.Z. Zainabidinov, Sh. Akbarov, N. A. Turgunov +2

    СтатьяSilicon and Solar Cell TechnologiesE3S Web of Conferences2025Цитирований: 0
    ABI

  6. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

    Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0
    ABI

  7. Development of AFM effect in non-homogenous chalcogenide thin films

    Shahjahan Yuldashev, Sapura Zaynolobidinova, Abror Yuldashev +1

    СтатьяChalcogenide Semiconductor Thin FilmsAIP conference proceedings2025Цитирований: 0
    ABI

  8. Effect of electron injection on charge properties of lead-boron-silicate glass

    О. О. Маматкаримов, N. Yu. Sharibaev, A. A. Abdulkhayev +1

    СтатьяSemiconductor materials and interfacesAIP conference proceedings2025Цитирований: 0
    ABI

  9. Growing Perfect Single-Crystal Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaN)<sub>x</sub> Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0
    ABI

  10. Statical Currents of p-Si–n-Si1-δSnδ–n+-Si1-δSnδ (0≤δ≤0.04)-Structures with Tin Quantum Dots

    Khurshidjon M. Madaminov, Avazbek Sh. Ikromov, Azizbek A. Abdurakhmonov

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0
    ABI

  11. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

    Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0
    ABI

  12. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

    B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0
    ABI

  13. Investigation of the formation mechanisms, crystallographic evolution and microstructural characteristics of the ZrSi2 phase on the Si(111) surface

    Б.Д. Игамов, I. R. Bekpulatov, A.I. Kamardin +4

    СтатьяSemiconductor materials and interfacesNext Materials2025Цитирований: 0
    ABI

  14. Hybrid Secondary Structure of Manganese and Sulfur in Silicon

    Sharifa B. Utamuradova, A. Sh. Mavlyanov, Sh. A. Sobirova +1

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2025Цитирований: 0
    ABI

  15. Influence of Cooling Rate on Structural and Electrophysical Changes in Zirconium-Doped Silicon (Si + Zr)

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Шерзодбек Исмоилов

    СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Independent Research Studies2025Цитирований: 0
    ABI

  16. Short-term microwave irradiation effect on specific contact resistance in metal-gap ohmic contacts

    Maxsud Nasirov

    СтатьяSemiconductor materials and interfaces2025Цитирований: 0
    ABI

  17. RAMAN SPECTROSCOPIC ANALYSIS OF TUNGSTEN SILICIDE (WSI2) PHASE FORMATION AND LATTICE STRESS IN P-TYPE SILICON.

    Sh.B. Utamuradova, Sh.Kh. Daliev, J.J. Khamdamov, Y.Z. Mardiyev

    СтатьяSemiconductor materials and interfacesZenodo (CERN European Organization for Nuclear Research)2025Цитирований: 0
    ABI

  18. RAMAN SPECTROSCOPIC ANALYSIS OF TUNGSTEN SILICIDE (WSI2) PHASE FORMATION AND LATTICE STRESS IN P-TYPE SILICON.

    Sh.B. Utamuradova, Sh.Kh. Daliev, J.J. Khamdamov, Y.Z. Mardiyev

    СтатьяSemiconductor materials and interfacesZenodo (CERN European Organization for Nuclear Research)2025Цитирований: 0
    ABI

  19. Calculated Forbidden Bandgap of Si₃MnS Phase in Supercell (1Х1Х3) and Experimentally Determined Forbidden Bandgap of Si<MnS>

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, A.Sh. Mavlyanov +1

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0
    ABI

  20. Physical Principles of Photocurrent Generation in a Silicon-Based Photodiode Structure with a Schottky Barrier

    F. A. Giyasova, Akhmad Z. Rakhmatov, Khayot Bakhronov +4

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0
    ABI

  21. Effect of Nickel Diffusion on Trap States and Interface Quality in Polycrystalline Silicon Structures

    Kanatbay A. Ismailov, B. K. Ismaylov, N. F. Zikrillayev +3

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0
    ABI

  22. Phase Transformations and Structural Transformations of Manganese Silicides in the Si-Mn System

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +2

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0
    ABI

  23. Study of thermoelectric properties of tungsten silicides

    A. T. Mamadalimov, M. Sh. Isaev, Sardor Qodirov +2

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2025Цитирований: 0
    ABI

  24. Electrophysical and Optical Characteristics of thin Doped FTO Films for Optoelectronics and Photovoltaics

    Sergei Khakhomov, Alina Semchenko, Vitali V. Sidski +5

    СтатьяSemiconductor materials and interfaces2025Цитирований: 0
    ABI

  25. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

    A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

    ГлаваSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation2025Цитирований: 0
    ABI