Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseскороОткрытый API экосистемы
Латиница
Русский

B. K. Ismaylov

Работ: 14

Tashkent State Technical University, 100095, Tashkent, Uzbekistan

  1. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2022Цитирований: 9
    ABI

  2. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    СтатьяMaterial Science and ThermodynamicsPhysical Sciences and Technology2023Цитирований: 7
    ABI

  3. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 6
    ABI

  4. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 3
    ABI

  5. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

    Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

    СтатьяSilicon and Solar Cell TechnologiesPhysical Sciences and Technology2024Цитирований: 2
    ABI

  6. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2024Цитирований: 1
    ABI

  7. Improving the efficiency of an industrial silicon solar cell by doping with nickel

    M. K. Bakhadirkhanov, Z. T. Kenzhaev, B. K. Ismaylov +3

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of the Belarusian State University Physics2021Цитирований: 0
    ABI

  8. Erratum to: Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +1

    ДругоеSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  9. INDENTATION OF NEGATIVE PHOTORESIST FILMS FOR LIFT-OFF LITHOGRAPHY

    С. А. Вабищевич, Д. И. Бринкевич, В. С. Просолович +4

    СтатьяMetal and Thin Film MechanicsHERALD OF POLOTSK STATE UNIVERSITY Series С FUNDAMENTAL SCIENCES2025Цитирований: 0
    ABI

  10. Ferromagnetic Properties of Silicon Doped Manganese Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, Levent Trabzon +4

    СтатьяZnO doping and propertiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0
    ABI

  11. Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

    B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0
    ABI

  12. Thermal stability parameters of silicon doped with nickel impurity atoms

    B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

    СтатьяThermal properties of materialsAIP conference proceedings2025Цитирований: 0
    ABI

  13. P-I-N PHOTODIODES WITH GETTERS CREATED BY ION IMPLANTATION OF MAIN DOPING IMPURITIES

    V.B. Odzhaev, A. N. Pyatlitski, V. S. Prasalovich +6

    СтатьяSilicon and Solar Cell TechnologiesHERALD OF POLOTSK STATE UNIVERSITY Series С FUNDAMENTAL SCIENCES2025Цитирований: 0
    ABI

  14. Effect of Nickel Diffusion on Trap States and Interface Quality in Polycrystalline Silicon Structures

    Kanatbay A. Ismailov, B. K. Ismaylov, N. F. Zikrillayev +3

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0
    ABI