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B. K. Ismaylov

14 works

Tashkent State Technical University, 100095, Tashkent, Uzbekistan

  1. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20229 citations
    ABI

  2. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    ArticleMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 citations
    ABI

  3. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 citations
    ABI

  4. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    ArticleSemiconductor materials and interfacesPhysical Sciences and Technology20243 citations
    ABI

  5. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

    Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

    ArticleSilicon and Solar Cell TechnologiesPhysical Sciences and Technology20242 citations
    ABI

  6. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 citations
    ABI

  7. Improving the efficiency of an industrial silicon solar cell by doping with nickel

    M. K. Bakhadirkhanov, Z. T. Kenzhaev, B. K. Ismaylov +3

    ArticleChalcogenide Semiconductor Thin FilmsJournal of the Belarusian State University Physics20210 citations
    ABI

  8. Erratum to: Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +1

    OtherSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citations
    ABI

  9. INDENTATION OF NEGATIVE PHOTORESIST FILMS FOR LIFT-OFF LITHOGRAPHY

    С. А. Вабищевич, Д. И. Бринкевич, В. С. Просолович +4

    ArticleMetal and Thin Film MechanicsHERALD OF POLOTSK STATE UNIVERSITY Series С FUNDAMENTAL SCIENCES20250 citations
    ABI

  10. Ferromagnetic Properties of Silicon Doped Manganese Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, Levent Trabzon +4

    ArticleZnO doping and propertiesSurface Engineering and Applied Electrochemistry20250 citations
    ABI

  11. Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

    B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 citations
    ABI

  12. Thermal stability parameters of silicon doped with nickel impurity atoms

    B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

    ArticleThermal properties of materialsAIP conference proceedings20250 citations
    ABI

  13. P-I-N PHOTODIODES WITH GETTERS CREATED BY ION IMPLANTATION OF MAIN DOPING IMPURITIES

    V.B. Odzhaev, A. N. Pyatlitski, V. S. Prasalovich +6

    ArticleSilicon and Solar Cell TechnologiesHERALD OF POLOTSK STATE UNIVERSITY Series С FUNDAMENTAL SCIENCES20250 citations
    ABI

  14. Effect of Nickel Diffusion on Trap States and Interface Quality in Polycrystalline Silicon Structures

    Kanatbay A. Ismailov, B. K. Ismaylov, N. F. Zikrillayev +3

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 citations
    ABI