Short-term microwave irradiation effect on specific contact resistance in metal-gap ohmic contacts

The research article deals with the study of the effect of microwave processing on the parameters of Au-TiBx-AuGe-n-GaP ohmic contacts formed on the basis of gallium phosphide (GaP), as well as with the determination of the possibility of reducing the specific contact resistance (ρ_c) and its homogeneity by means of non-heated microwave processing. The present paper puts forward the proposition of non-heated microwave processing as a process treatment for Schottky barrier TiBx-n-GaP device structures, with a view to improving the parameters of Schottky barrier diodes. The results of the study show that this processing method can be used to improve the parameters of ohmic contacts and is promising for application in the technological processes of semiconductor device fabrication. In order to reduce the specific contact resistance (ρ_c) and inhomogeneity of the ρ_c distribution on the plate of gallium phosphide, it is reasonable to treat the plate containing planar ohmic contacts by means of short-term microwave radiation at a frequency of f = 2.45 GHz for 1–40 seconds, at a specific power of radiation of ~1.5 W/cm².

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