M. Sh. Ibragimova

Работ: 5

Urgench State University, Urgench, Uzbekistan

1. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

   J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

   СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.000556

2. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

   J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

   СтатьяSilicon and Solar Cell TechnologiesLow Temperature Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.003469

3. Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions

   Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.011343

4. Mathematical Modeling of Electrostatic Potential in Radial and Planar p–n Junctions: A Comparative Study

   Dildora Qalandarova, M. Sh. Ibragimova, J. Sh. Abdullayev +1

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.011411

5. Cryogenic Material and Electrophysical Changes in Si and GaAs

   Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.011417