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J. Sh. Abdullayev

Работ: 5

Head of the department «Physics and Chemistry», National Research University TIIAME, Kori Niyoziy 39, 100000, Tashkent, Uzbekistan

  1. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
    ABI

  2. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    СтатьяSilicon and Solar Cell TechnologiesLow Temperature Physics2026Цитирований: 0
    ABI

  3. Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2026Цитирований: 0
    ABI

  4. Mathematical Modeling of Electrostatic Potential in Radial and Planar p–n Junctions: A Comparative Study

    Dildora Qalandarova, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2026Цитирований: 0
    ABI

  5. Cryogenic Material and Electrophysical Changes in Si and GaAs

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2026Цитирований: 0
    ABI