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Semiconductor materials and interfaces

Работ: 771

  1. Silicon with Magnetic Nanoclusters of Manganese Atoms as a New Ferromagnetic Material

    М. К. Бахадырханов, Х. М. Илиев, Г. Х. Мавлонов +3

    СтатьяSemiconductor materials and interfacesTechnical Physics2019Цитирований: 10
    ABI

  2. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10
    ABI

  3. Study of Quantitative and Qualitative Characteristics of Nickel Clusters and Semiconductor Structures

    Elyor Saitov

    СтатьяSemiconductor materials and interfacesJournal of Materials Science and Chemical Engineering2016Цитирований: 10
    ABI

  4. Self-organization of nickel atoms in silicon

    М. К. Бахадырханов, Х. М. Илиев, K. S. Ayupov +3

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2011Цитирований: 10
    ABI

  5. Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions

    S. A. Muzafarova, Ш. А. Мирсагатов, J. Janabergenov

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2007Цитирований: 10
    ABI

  6. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2006Цитирований: 9
    ABI

  7. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    СтатьяSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics2021Цитирований: 9
    ABI

  8. Raman spectroscopy of silicon, doped with platinum and irradiated by protons

    Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1

    СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2023Цитирований: 9
    ABI

  9. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 9
    ABI

  10. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 9
    ABI

  11. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 9
    ABI

  12. The Temperature Dependence of the Density of States in Semiconductors

    G. Gulyamov, Nosir Yusupjanovich Sharibaev, Ulugbek Inoyatillaevich Erkaboev

    СтатьяAdvanced Semiconductor Detectors and MaterialsWorld Journal of Condensed Matter Physics2013Цитирований: 9
    ABI

  13. Clusters of nickel atoms and controlling their state in silicon lattice

    М. К. Бахадырханов

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics2018Цитирований: 9
    ABI

  14. Optimal Conditions for Nickel Doping to Improve the Efficiency of Silicon Photoelectric Cells

    М. К. Бахадырханов, Z. T. Kenzhaev

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics2021Цитирований: 9
    ABI

  15. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 9
    ABI

  16. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
    ABI

  17. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    СтатьяSemiconductor materials and interfacesSemiconductors2021Цитирований: 8
    ABI

  18. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    СтатьяSemiconductor materials and interfacesSemiconductors2022Цитирований: 8
    ABI

  19. Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

    М. К. Бахадырханов, Z. T. Kenzhaev, S. Koveshnikov +2

    СтатьяSilicon and Solar Cell TechnologiesInorganic Materials2022Цитирований: 8
    ABI

  20. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 8
    ABI

  21. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

    Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

    СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 8
    ABI

  22. Structure Determination and Defect Analysis n-Si&lt;Lu&gt;, p-Si&lt;Lu&gt; Raman Spectrometer Methods

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Zavkiddin E. Bahronkulov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 8
    ABI

  23. Investigation of the Magnetic Properties of Silicon Doped with Rare-Earth Elements

    Khodjakbar S. Daliev, Zavkiddin E. Bahronkulov, Jonibek J. Hamdamov

    СтатьяMagnetic Field Sensors TechniquesEast European Journal of Physics2023Цитирований: 8
    ABI

  24. X-Ray Structural Investigations Of n-Si&lt;Pt&gt; Irradiated with Protons

    Sharifa B. Utamuradova, А. В. Станчик, Dilmurod A. Rakhmanov

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8
    ABI

  25. Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

    Kh.S. Daliev, Sharifa B. Utamuradova, I. Kh. Khamidzhonov +3

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2001Цитирований: 8
    ABI