Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions
З. А. ИсахановInstitute of Ion–Plasma and Laser Technologies, 100125, Tashkent, UzbekistanИ.О. КосимовTashkent State Technical University, 100097, Tashkent, UzbekistanБ. Е. УмирзаковTashkent State Technical University, 100097, Tashkent, UzbekistanR. M. ErkulovInstitute of Ion–Plasma and Laser Technologies, 100125, Tashkent, Uzbekistan
ABI
Abstract
Using the methods of Auger electron spectroscopy, electron energy loss spectroscopy, and UV photoelectron spectroscopy, the influence of Ba+ ion implantation on the composition, crystal structure, and electron configuration of the surface of Si–Cu(100) free films have been investigated. Specifically, it has been shown that Ba ion implantation and subsequent annealing make it possible to obtain BaSi nanofilms with some excess (to 10 at %) of unbounded silicon atoms.