Electronic and Optical Properties of GaAlAs/GaAs Thin Films
Б. Е. УмирзаковKarimov Tashkent State Technical University, 100095, Tashkent, UzbekistanS. B. DonaevKarimov Tashkent State Technical University, 100095, Tashkent, UzbekistanN. M. MustafaevaKarimov Tashkent State Technical University, 100095, Tashkent, Uzbekistan
ABI
Abstract
It has been shown that the formation of GaAlAs nanofilms on a GaAs surface leads to an increase in the emission coefficient of true secondary electrons and in the quantum yield of photoelectrons, which can be accounted for by the difference of the escape depth of true secondary electrons for GaAs and GaAlAs.