Article

Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

Samad NimatovKarimov State Technical University, 100095, Tashkent, Republic of UzbekistanБ. Е. УмирзаковKarimov State Technical University, 100095, Tashkent, Republic of UzbekistanF. Ya. KhudaikulovKarimov State Technical University, 100095, Tashkent, Republic of UzbekistanД. С. Руми

Technical Physicsjournal2019en

ABI

Abstract

Modification of Si(111) surface due to ion bombardment and subsequent annealing has been studied. It has been found that annealing following bombardment with 0.3- to 1.0-keV ions causes a multilayer metal silicide coating to form on the surface. It has also been established that work function φ of Si(111) variously depends on dose at different energies of types of ions.

Topics

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Semiconductor materials and interfaces

Identifiers

DOI: 10.1134/s1063784219100153

Citations and references

Cited by 8 4 references

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