Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem
← Back to work

Works citing this work

13 works

Work: Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

  1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 citations
    ABI

  2. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    ArticleSemiconductor materials and interfacesModern Physics Letters B202317 citations
    ABI

  3. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20239 citations
    ABI

  4. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    ArticlePhotocathodes and Microchannel PlatesTechnical Physics20198 citations
    ABI

  5. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    ArticleSemiconductor materials and devicesTechnical Physics20177 citations
    ABI

  6. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    ArticleNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 citations
    ABI

  7. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20202 citations
    ABI

  8. Study of the Processes of the Formation of Nanoscale MoO3 Films by Thermal Oxidation and Ion Bombardment

    Gulmira X. Allayarova, Д. А. Ташмухамедова, R. Djabbarganov +1

    ArticleTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 citations
    ABI

  9. The effect of implantation barium ions on the surface of Pd and Pd-Ba under ion bombardment

    S. B. Donaev, Jakhongir Normuminov, A.M. Rakhimov +2

    ArticleIon-surface interactions and analysisIOP Conference Series Earth and Environmental Science20201 citations
    ABI

  10. Studying the Trajectory of Scattered Ions from Surface Atomic Rows SiO<sub>2</sub>(001)&lt;110&gt; at Glancing Incidence

    Atabek S. Ashirov, Mukhtorjon K. Karimov, Uchkun Kutliev +1

    ArticleIon-surface interactions and analysis20240 citations
    ABI

  11. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citations
    ABI

  12. Study of regularities of formation of thin three-component CdMgTe films on CdTe(111) surface upon implantation of Mg ions and subsequent annealing

    Д. А. Ташмухамедова, A. A. Abduvayitov, X. X. Boltaev +2

    ArticleAdvanced Semiconductor Detectors and MaterialsAIP conference proceedings20250 citations
    ABI

  13. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

    ArticleSemiconductor materials and interfacesMaterials Today Communications20260 citations
    ABI