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Sh. N. Usmonov

45 works

Academy of Sciences of Uzbekistan

  1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleMaterial Science and ThermodynamicsSemiconductors200913 citations
    ABI

  2. Thermovoltaic properties of technical silicon melted by solar radiation

    А. С. Саидов, A. A. Abakumov, М. С. Саидов +2

    ArticleDiverse Industrial Engineering TechnologiesApplied Solar Energy200711 citations
    ABI

  3. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    ArticleSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 citations
    ABI

  4. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20109 citations
    ABI

  5. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductors20108 citations
    ABI

  6. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    ArticleAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 citations
    ABI

  7. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    ArticlePhase-change materials and chalcogenidesApplied Solar Energy20198 citations
    ABI

  8. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    ArticleQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 citations
    ABI

  9. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 citations
    ABI

  10. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    ArticleSemiconductor materials and interfacesSemiconductors20098 citations
    ABI

  11. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    ArticleNear-Field Optical MicroscopyPhysics of the Solid State20147 citations
    ABI

  12. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    ArticleChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 citations
    ABI

  13. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20165 citations
    ABI

  14. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20174 citations
    ABI

  15. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesSemiconductors20184 citations
    ABI

  16. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    ArticlePhotonic and Optical DevicesSemiconductors20124 citations
    ABI

  17. Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    ArticleAdvanced Thermoelectric Materials and DevicesApplied Solar Energy20103 citations
    ABI

  18. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20153 citations
    ABI

  19. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20073 citations
    ABI

  20. Structure and photoelectric properties of Si1 − x Sn x epilayers

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20103 citations
    ABI

  21. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20073 citations
    ABI

  22. Thermovoltaic effect of pSi-n(Si2)1−x(ZnS)x structures

    М. С. Саидов, А. С. Саидов, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesApplied Solar Energy20092 citations
    ABI

  23. Heat-voltaic effect of pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesApplied Solar Energy20102 citations
    ABI

  24. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov +1

    ArticleSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20202 citations
    ABI

  25. Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x (Si2) x and nGaAs–p(InSb)1–x (Sn2) x heterostructures

    Sh. N. Usmonov

    ArticleSemiconductor materials and interfacesApplied Solar Energy20162 citations
    ABI