Structure and photoelectric properties of Si1 − x Sn x epilayers
Abstract
Epitaxial layers of n-type Si1 − x Snx (0 ≤ x ≤ 0.04) solid solution were grown by liquid phase epitaxy from tin-based solution melt confined between two horizontal Si(111) single crystal silicon substrates. The structure of epilayers was determined and the photosensitivity spectra of pSi-nSi1 − x Snx (0 ≤ x ≤ 0.04) structures were studied at various temperatures. It is established that Si0.96Sn0.04 films have a perfect single crystal structure with (111) orientation and a subgrain size of 60 nm. The photosensitivity edge of the pSi-nSi0.96Sn0.04 structure is shifted to longer wavelengths as compared to that of the pSi-nSi structure. The photosensitivity of the pSi-nSi0.96Sn0.04 structure in the impurity absorption range depends on the temperature.