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Sh. N. Usmonov

45 works

Uzbek Academy of Sciences

  1. Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20102 citations
    ABI

  2. Impurity thermophotovoltaic effect of the grain boundaries of technical-grade silicon

    М. С. Саидов, А. С. Саидов, Sh. N. Usmonov

    ArticleThermal Radiation and Cooling TechnologiesApplied Solar Energy20082 citations
    ABI

  3. Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20091 citations
    ABI

  4. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20201 citations
    ABI

  5. Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    ArticleSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 citations
    ABI

  6. Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    ArticleSilicon Nanostructures and PhotoluminescenceSilicon20241 citations
    ABI

  7. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20071 citations
    ABI

  8. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20081 citations
    ABI

  9. Photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20131 citations
    ABI

  10. Thermovoltaic properties of technical silicon melted by solar radiation

    А. С. Саидов, A. A. Abakumov, М. С. Саидов +2

    ArticleMaterial Science and ThermodynamicsApplied Solar Energy20071 citations
    ABI

  11. Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20080 citations
    ABI

  12. Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +1

    ArticleInsect and Pesticide ResearchApplied Solar Energy20090 citations
    ABI

  13. Эффект инжекционного обеднения в p-Si-n-(Si-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(ZnSe)-=SUB=-x-=/SUB=- (0≤ x≤0.01) гетероструктуре

    А. С. Саидов, А.Ю. Лейдерман, Sh. N. Usmonov +1

    ArticleSilicon Nanostructures and PhotoluminescenceФизика и техника полупроводников20180 citations
    ABI

  14. Influence of the varizonal Si<sub>1-x</sub>Ge<sub>x</sub> solid solution composition on the thermovoltaic effect in n – Si – p – Si<sub>(1-x)</sub>Ge<sub>x</sub> structure

    А. С. Саидов, Sh. N. Usmonov, A B Karshiev +1

    ArticleSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20220 citations
    ABI

  15. Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    ArticleDiamond and Carbon-based Materials ResearchPhysical Sciences and Technology20230 citations
    ABI

  16. Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

    А. С. Саидов, Sh. N. Usmonov, O. Z. Turgunov

    ArticleSemiconductor materials and interfacesApplied Solar Energy20230 citations
    ABI

  17. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    PreprintGaN-based semiconductor devices and materialsResearch Square20230 citations
    ABI

  18. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    ArticleSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 citations
    ABI

  19. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    ArticleGaN-based semiconductor devices and materialsActa Physica Polonica A20250 citations
    ABI

  20. Development and Investigation of Semiconductor Detectors of Ionizing Radiation Based on p-Si/n-InP Heterostructures

    S. A. Radzhapov, A. S. Saidov, Sh. N. Usmonov +1

    ArticleAdvanced Materials and Semiconductor TechnologiesInstruments and Experimental Techniques20260 citations
    ABI