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D. V. Saparov

23 works

Physical-Technical Institute, Scientific Association “Physics-Sun”, Uzbek Academy of Sciences, Chingiz Aytmatov Street 2B, Tashkent 100084, Uzbekistan

  1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    ArticleSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 citations
    ABI

  2. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    ArticleQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 citations
    ABI

  3. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    ArticleSemiconductor materials and interfacesSemiconductors20098 citations
    ABI

  4. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    ArticleChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 citations
    ABI

  5. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20073 citations
    ABI

  6. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20073 citations
    ABI

  7. Growing the solid solution of molekular substitution (GaAs)<sub>1-z</sub>(ZnSe)<sub>z</sub>

    А. С. Саидов, D. V. Saparov, Shukrullo Usmonov +2

    ArticleChalcogenide Semiconductor Thin FilmsIOP Conference Series Materials Science and Engineering20212 citations
    ABI

  8. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    А. С. Саидов, A. Sh. Razzakov, D. V. Saparov

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20022 citations
    ABI

  9. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov +1

    ArticleSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20202 citations
    ABI

  10. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    ArticleSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 citations
    ABI

  11. Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    ArticleSilicon Nanostructures and PhotoluminescenceSilicon20241 citations
    ABI

  12. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20071 citations
    ABI

  13. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20081 citations
    ABI

  14. Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si2)1–x (GaP) x (0 ≤ x ≤ 1) solution

    D. V. Saparov, М. С. Саидов, А. С. Саидов

    ArticleSemiconductor materials and interfacesApplied Solar Energy20161 citations
    ABI

  15. Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20080 citations
    ABI

  16. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    PreprintGaN-based semiconductor devices and materialsResearch Square20230 citations
    ABI

  17. Thermally Stimulated Transformation of Oxygen Atoms between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    PreprintSilicon Nanostructures and PhotoluminescenceResearch Square20230 citations
    ABI

  18. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    ArticleSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 citations
    ABI

  19. Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)<sub>1-x-y</sub>(Ge2)<sub>x</sub>(ZnSe)<sub>y</sub>

    Shavkat Ismailov, D. V. Saparov, А. С. Саидов +2

    ArticlePhase-change materials and chalcogenides20240 citations
    ABI

  20. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

    D. V. Saparov

    ArticleZnO doping and propertiesJournal of Crystal Growth20240 citations
    ABI

  21. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    ArticleGaN-based semiconductor devices and materialsAIP conference proceedings20240 citations
    ABI

  22. Radiation-Stimulated Transformation of Cxygen Atoms Between Impurity Phase States of A Growing Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, Sh. R. Malikov +5

    ArticleSilicon and Solar Cell TechnologiesSilicon20250 citations
    ABI

  23. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    ArticleGaN-based semiconductor devices and materialsActa Physica Polonica A20250 citations
    ABI