Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si2)1–x (GaP) x (0 ≤ x ≤ 1) solution
D. V. SaparovPhysical–Technical Institute, Scientific Association “Physics–Sun”, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanМ. С. СаидовPhysical–Technical Institute, Scientific Association “Physics–Sun”, Academy of Sciences of Uzbekistan, Tashkent, 100084, UzbekistanА. С. СаидовPhysical–Technical Institute, Scientific Association “Physics–Sun”, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan
ABI
Abstract
The article concerns the growth of a hetero-epitaxial GaP layer on a silicon substrate via a buffer layer containing a continuous solid substitutional solution (Si2)1–x (GaP) x (0 ≤ x ≤ 1) from the liquid phase. Epitaxial films grown under 950–830°С have n-type conductivity and specific resistance of ~0.01 Ohm•cm. The thickness of epitaxial films is 10–15 μm. The spectral sensitivity of the pSi-n(Si2)1–x (GaP) x (0 ≤ x ≤ 1) heterostructure, which allows expanding the region of the spectral sensitivity of silicon photoreceivers and photocells, is studied.
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