Thermally Stimulated Transformation of Oxygen Atoms between Phase States in a Silicon Single Crystal

Abstract

Abstract The high-temperature X-ray diffraction method showed the presence of two phase states of oxygen in the volume of a single crystal of silicon grown by the Czochralski method: a dissolved (interstitial) state in the composition of “quasimolecules” - SiO 2 and a chemically bound (precipitate) state in the composition of silicon dioxide - SiO 2 ; the precipitate state of oxygen in the bulk of silicon is in the form of crystalline SiO 2 (c), and in the near-surface layer of a single crystal in the amorphous form of SiO 2 (a). The thermally stimulated transformation of oxygen atoms between dissolved and precipitate states of oxygen in crystalline form in the bulk of a silicon single crystal has been established.

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Identifiers

DOI

10.21203/rs.3.rs-3690667/v1

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