Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties
Abstract
In this work, the physical features of growing epitaxial layers of new solid solutions of (GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] from the liquid phase of the tin solution-melt on GaAs (100) substrates were investigated. The conditions required for the formation of the solid solution of molecular substitution were revealed. A possible configuration of the crystal structure of the solid solution (GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] is presented. In the spectral photosensitivity of the [Formula: see text]-GaAs–[Formula: see text]-(GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] structures, peaks with maxima at photon energies of 1.37 eV and 2.62 eV were found. The band diagram of the solid solution (GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] was presented.