Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy
Sh. N. UsmonovPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, UzbekistanА. С. СаидовPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, UzbekistanA. Yu. LeydermanPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, UzbekistanD. V. SaparovPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, UzbekistanKhomidkhodzha KholikovPhysicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, Uzbekistan
ABI
Abstract
It is shown that it is possible to grow a continuous series of (GaSb)1 − x (Si2) x (x = 0−1) alloys on silicon substrates by the method of liquid-phase epitaxy from a tin solution—melt. The X-ray patterns and the spectral and current-voltage characteristics of the obtained p-Si-n-(GaSb)1 − x (Si2) x in the temperature range of 20–200°C are studied. An extended section of the type V ∞ exp(JaW) corresponding to the effect of injection-caused depletion is observed in the current-voltage characteristics.