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Works cited by this work

11 works

Work: Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Book200258 citations
    ABI

  2. Constitution of Binary Alloys

    Max Hansen, K. Anderko, H. W. Salzberg

    Article195826 citations
    ABI

  3. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

    ArticleChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 citations
    ABI

  4. Physics of Semiconductor Devices

    Geoffrey Pridham

    Article197019 citations
    ABI

  5. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Article197812 citations
    ABI

  6. Untitled

    Other7 citations
    ABI

  7. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    ArticleAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 citations
    ABI

  8. Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

    C.A Wang, D.A. Shiau, Ann Lin

    Article20032 citations
    ABI

  9. Untitled

    Other1 citations
    ABI

  10. Untitled

    Other1 citations
    ABI

  11. Untitled

    Other1 citations
    ABI