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Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

А. С. СаидовPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanShukrullo UsmonovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. V. SaparovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanTolmas IshniyazovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKurban GaimnazarovGulistan State University, Sirdarya, UzbekistanS NiyazovGulistan State University, Sirdarya, UzbekistanKomil SATTARKULOVGulistan State University, Sirdarya, Uzbekistan
AIP conference proceedingsjournal2024en
ABI

Abstract

No abstract available.

Topics

GaN-based semiconductor devices and materialsSemiconductor materials and devicesThin-Film Transistor Technologies

Identifiers

DOI
10.1063/5.0242096

Citations and references

Cited by 018 references
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