Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt
A.S. SaidovPhysical-Technical Institute, Uzbekistan Academy of SciencesM. U. KalanovInstitute of Nuclear Physics, Uzbekistan Academy of SciencesD. V. SaparovPhysical-Technical Institute, Uzbekistan Academy of SciencesSh. N. UsmonovPhysical-Technical Institute, Uzbekistan Academy of SciencesD. A. EshonkhojaevAndijan Machine Building InstituteM.B. TagaevKarakalpak State University named after BerdakA. M. AkhmedovTashkent Institute of Irrigation and Agriculture Mechanization Engineers
ABI
Abstract
This paper presents the results of experimental studies of the structural characteristics of the epitaxial layers of GaAs1−x−yZnSexGey solid solutions grown from a bismuth solution-melt on GaAs substrates with (100) crystallographic orientation. The grown epitaxial film of the GaAs1−x−yZnSexGey solid solution is a single crystal with a sphalerite-like structure with the (100) orientation corresponding to the substrate orientation. It is shown that ZnSe molecules partially replace GaAs molecules in defect-capable regions of the (100) matrix crystal lattice at the high-potential sites.
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