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A. M. Akhmedov

9 works

Tashkent Institute of Irrigation and Agriculture Mechanization Engineers, Kory Niyoziy Str. 39, Tashkent 100000, Uzbekistan

  1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

    ArticleSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 citations
    ABI

  2. Dielectric and microwave properties of ceramics of the Bi-Ti-O system

    Halina Sauchuk, Natallia Yurkevich, A. M. Akhmedov +3

    ArticleFerroelectric and Piezoelectric MaterialsE3S Web of Conferences20236 citations
    ABI

  3. The influence of production conditions on the electrophysical parameters of piezoceramics for different applications

    A. M. Akhmedov, Galina Sauchuk, Natallia Yurkevich +3

    ArticleFerroelectric and Piezoelectric MaterialsE3S Web of Conferences20216 citations
    ABI

  4. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov +1

    ArticleSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20202 citations
    ABI

  5. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    ArticleSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 citations
    ABI

  6. Features of Liquid–Phase Epitaxy of (InSb)<sub>1–z</sub>(Sn2)<sub>z</sub> Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

    Shukrullo Usmonov, U. P. Asatova, A. M. Akhmedov

    ArticleSemiconductor Quantum Structures and Devices20221 citations
    ABI

  7. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    PreprintGaN-based semiconductor devices and materialsResearch Square20230 citations
    ABI

  8. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    ArticleSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 citations
    ABI

  9. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    ArticleGaN-based semiconductor devices and materialsActa Physica Polonica A20250 citations
    ABI