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Works cited by this work

28 works

Work: Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

  1. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    ArticleAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 citations
    ABI

  2. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    ArticleSemiconductor materials and interfacesSemiconductors20098 citations
    ABI

  3. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    ArticlePhotonic and Optical DevicesSemiconductors20124 citations
    ABI

  4. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, А. С. Саидов, B. Allabergenov +3

    ArticleChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 citations
    ABI

  5. Single crystal preparation and properties of the AgGaGeS4–AgGaGe3Se8 solid solution

    М. В. Шевчук, Victor V. Atuchin∥⊥, A.V. Kityk +5

    Article20102 citations
    ABI

  6. Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

    Michael D. Thompson, Aiyeshah Alhodaib, Adam P. Craig +7

    Article20152 citations
    ABI

  7. Band-gap tailoring and visible-light-driven photocatalytic performance of porous (GaN)<sub>1−x</sub>(ZnO)<sub>x</sub>solid solution

    Aimin Wu, Jing Li, Baodan Liu +6

    Article20172 citations
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