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A. Sh. Razzokov

13 works

Urgench State University, Urgench, Uzbekistan

  1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    А. С. Саидов, A. Sh. Razzokov

    ArticleSemiconductor materials and interfacesCrystallography Reports20225 citations
    ABI

  2. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    А. С. Саидов, A. Sh. Razzokov, С.И. Петрушенко +1

    ArticleSemiconductor materials and interfacesActa Physica Polonica A20222 citations
    ABI

  3. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, А. С. Саидов, V. V. Gіrzhon +1

    ArticleSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 citations
    ABI

  4. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, А. С. Саидов, B. Allabergenov +3

    ArticleChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 citations
    ABI

  5. Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

    A. Sh. Razzokov, Khushnudbek Eshchanov

    ArticlePhotonic and Optical DevicesInternational Journal of Thermodynamics20221 citations
    ABI

  6. THERMODYNAMIC BASES OF OBTAINING CRYSTALLINE PERFECT SILICON FROM SOLUTION-MELT

    Khushnudbek Eshchanov, A. Sh. Razzokov

    ArticleSolidification and crystal growth phenomena20210 citations
    ABI

  7. Thermodynamic Bases for Obtaining Crystalline Perfect Silicon from Tin-silicon Solution

    A. Sh. Razzokov, Khushnudbek Eshchanov

    ArticleHermeneutics and Narrative IdentityDergiPark (Istanbul University)20210 citations
    ABI

  8. Growth of Epitaxial Layers of the Si&lt;sub&gt;1-x-y&lt;/sub&gt;Ge&lt;sub&gt;x&lt;/sub&gt;Sn&lt;sub&gt;y&lt;/sub&gt; Solid Solution from a Tin Solution-Melt

    A. Sh. Razzokov

    ArticlePhotonic and Optical DevicesSiberian Journal of Physics20230 citations
    ABI

  9. Theoretical Evaluation of Silicon Crystal Growth Using Gallium Solvent

    A. Sh. Razzokov, Khushnudbek Eshchanov

    ArticleSilicon and Solar Cell TechnologiesProceedings of Pakistan Academy of Sciences A Physical and Computational Sciences20240 citations
    ABI

  10. STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD

    A. Sh. Razzokov, Khushnudbek Eshchanov, А. С. Саидов

    ArticleAnodic Oxide Films and NanostructuresInternational Journal of Mathematics and Physics20250 citations
    ABI

  11. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    ArticleGaN-based semiconductor devices and materialsActa Physica Polonica A20250 citations
    ABI

  12. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

    A. Sh. Razzokov, V. V. Gіrzhon, I. Shtablavyi

    ArticleSilicon Nanostructures and PhotoluminescenceVacuum20250 citations
    ABI

  13. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

    A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

    ChapterSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation20250 citations
    ABI