Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures
А. С. СаидовPhysical-Technical Insitute, SPA “Physics-Sun,” Uzbekistan Academy of Sciences, Tashkent, UzbekistanA. Sh. RazzokovUrgench State University, Urgench, Uzbekistan
ABI
Abstract
Single-crystal films of Si1 – xGex (0 < x < 1) solid solution have been grown on Si substrates by liquid-phase epitaxy, and a Si–Si1–xGex–GaAs heterostructure was fabricated based on them. The dislocation density at the substrate–film interface, along the growth direction of Si1 – xGex solid solutions grown under different technological conditions, as well as the chemical composition of the surface and film chipping were studied. Optimal technological modes for growing perfect crystalline epitaxial layers and structures are reported.
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