Works citing this work

5 works

Work: Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

1. Optical Properties of GexSi1 – x Binary Compounds in Silicon

   Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

   ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 citations

   ABIABI:AkademIndex/openalex/2023.article.002005

2. Features of growing Si- and Si_1-<i>x</i>Ge_<i>x</i>-single-crystal films from solution-melt based on tin

   A. Sh. Razzokov, А. С. Саидов, V. V. Gіrzhon +1

   ArticleSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 citations

   ABIABI:AkademIndex/openalex/2022.article.000838

3. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

   A. Sh. Razzokov, А. С. Саидов, B. Allabergenov +3

   ArticleChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 citations

   ABIABI:AkademIndex/openalex/2023.article.002347

4. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

   A. Sh. Razzokov, V. V. Gіrzhon, I. Shtablavyi

   ArticleSilicon Nanostructures and PhotoluminescenceVacuum20250 citations

   ABIABI:AkademIndex/openalex/2025.article.008005

5. Growth and structural study of the solid solution Si1−xGex (0 &lt; x &lt; 1)

   Alijon Shonazarovich RAZZOKOV, Serhii Ivanovych Petrushenko, Mateusz Fijalkowski +2

   ArticleSilicon Nanostructures and PhotoluminescenceJournal of Crystal Growth20260 citations

   ABIABI:AkademIndex/openalex/2026.article.006586