Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin
A. Sh. RazzokovUrgench State University, 14, Kh. Alimdjan St., Urgench, 220100, Uzbekistan,A.S. SaidovPhysical-Technical Institute NPO Physics-Sun of the Academy of Sciences of the Republic of Uzbekistan, 2B, Ch. Aitmatov St., Tashkent, 100084, Uzbekistan,V. V. GіrzhonZaporizhzhia National University, 66, Zhukovsky St., Zaporizhzhia, UA69063, UkraineO. V. SmolyakovZaporizhzhia National University, 66, Zhukovsky St., Zaporizhzhia, UA69063, Ukraine
ABI
Abstract
The features of variband single-crystal structures based on Si1-xGex (0 < x < 1), which have been grown on Si(111) substrates from a tin solution-melt by liquid-phase epitaxy have been experimentally investigated and analyzed. A mechanism for the growth of such structures is proposed, and the reason for the greater thickness of the deposited lms on the upper substrates for liquid-phase epitaxy is explained based on the RayleighTaylor instability phenomenon. Optimal technological regimes for obtaining epitaxial layers and structures are predicted.
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