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Works cited by this work

14 works

Work: Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

  1. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    ArticlePhase-change materials and chalcogenidesApplied Solar Energy20198 citations
    ABI

  2. Direct-bandgap emission from hexagonal Ge and SiGe alloys

    Elham Fadaly, Alain Dijkstra, Jens Renè Suckert +17

    Article20206 citations
    ABI

  3. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    А. С. Саидов, A. Sh. Razzokov

    ArticleSemiconductor materials and interfacesCrystallography Reports20225 citations
    ABI

  4. Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

    Kwang-Won Jo, Wu-Kang Kim, Mitsuru Takenaka +1

    Article20194 citations
    ABI

  5. Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x (Si2) x and nGaAs–p(InSb)1–x (Sn2) x heterostructures

    Sh. N. Usmonov

    ArticleSemiconductor materials and interfacesApplied Solar Energy20162 citations
    ABI

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