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9 works

Work: Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

  1. Direct-bandgap emission from hexagonal Ge and SiGe alloys

    Elham Fadaly, Alain Dijkstra, Jens Renè Suckert +17

    Article20206 citations
    ABI
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    Other1 citations
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