THERMODYNAMIC BASES OF OBTAINING CRYSTALLINE PERFECT SILICON FROM SOLUTION-MELT

Abstract

Single-crystal films of Si have grown on Si substrates from a tin solution-melt at a temperature in the range of the onset of crystallization To.c.=1073÷1323 K by liquid-phase epitaxy. The dependence of dislocations at the substrate-film interface on the number and size of the formation of nanoclusters in the solution-melt during the growth of silicon has been studied. Optimal technological growth modes are given, taking into account the Gibbs energy of the system to obtain crystalline perfect epitaxial layers and structures.

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